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Nanocrystals
and Quantum Dots of Group IV Semiconductors
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Edited by
T. V. Torchynska, National Polytechnic Institute,
Mexico Yu. V. Vorobiev, CINVESTAV-IPN, Unidad
Queretaro, Mexico |
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July
2010 300 pages, Hardcover ISBN: 1-58883-154-X US$399.00 |
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ABOUT
THIS BOOK |
Nanocrystals
and quantum dots are nanometer-scale semiconductor structures that
represent one of the most intensively developing areas of modern
semiconductor physics. The optical, magnetic, electronic,
mechanical, and biochemical properties of materials are beginning to
be modified using nano-scale structures. Novel physical phenomena in
nano-scale structures have been revealed and are applied in lasers
and optical amplifiers, light emitting diodes, photodiodes, memory
devices, biological luminescence markers, etc. The application of
quasi zero-dimensional quantum dots in electronics has led to novel
semiconductor technology and device concepts as well as to essential
improvement in device performances. These achievements and
technological applications of modern electronics deal mainly with
direct band gap semiconductors such as the materials found in the
groups III-V (InAs, GaAs,) and II-VI (CdSe, ZnS). In the case of
indirect band gap materials (Si, Ge, SiC) many fundamental facts and
phenomena related to the nanocrystals and quantum dots are now at
least qualitatively understood, but no comprehensive survey exists
to guide newcomers to the field. This book tries to fill this gap.
It focuses on the optical and electrical phenomena in nanocrystal
structures of indirect band gap group IV materials (Si, Ge, SiC).
This book is an attempt to review the modern existing information in
published materials. In addition, it includes the scientific results
obtained by the authors' team, related to the physics, technology,
optical and electrical properties, and different applications of Si,
Ge, and SiC nanocrystal and quantum dot structures. It may be
incomplete as such a work in a rapidly progressing field necessarily
will be. |
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