NONVOLATILE MEMORIES-Materials, Devices and Applications 2-Volume set        2-Volume Set Edited by Tseung-Yuen Tseng and Simon M. Sze National Chiao Tung University, Taiwan     2012, ca. 850 pages, Hardcover ISBN: 1-58883-250-3 US$695.00   ABOUT THIS BOOK Nonvolatile semiconductor memory (NVSM) is one of the most important discoveries in the field of electron devices since the invention of the transistor. Invented by D. Kahng and S.M. Sze in 1967, NVSM, today, is the largest electronic industry in the world. This single invention has subsequently given rise to a large family of memory devices including flash memory and electrically erasable programmable read-only memory (EEPROM). All modern electronic devices, like mobile phones, notebook computers, digital cameras, MP3 music players, personal digital assistants, digital televisions, automotive engine control units, portable medical diagnostic systems, USB flash personal discs, and global positioning systems, are all based on NVSM. In the past 20 years, NVSM’s minimum feature length has been scaled down from 0.8 ?m to sub-20 nm—a 40-fold reduction. Many alternative NVSM technologies are being developed to reduce the size (sub-10 nm) and improve device performance. Nonvolatile Memories is a two-volume book containing 32 state-of-the-art chapters written by 71 world-leading experts on nonvolatile memories. It includes comprehensive coverage of the physics, material science, device engineering, and applications of nonvolatile memory devices. The book summarizes the most recent advances and future trends in the field of nonvolatile semiconductor memory. This book is intended as a reference book for engineers and scientists actively involved in semiconductor device research and development. It also serves as a textbook for senior undergraduate and graduate students in applied physics, materials science and engineering, electrical and electronics engineering, who have already acquired a basic understanding of semiconductor device physics. CONTENTS Volume 1 An Introduction to Nonvolatile Memories, Tseung-Yuen Tseng and Simon M. Sze Silicon-Based Thin-Film Transistor Nonvolatile Memories, Andrew J. Walker Nonvolatile Memory Devices with Nanocrystals and Dielectrics, Ting-Chang Chang, Fu-Yen Jian, Shih-Ching Chen, and Chih-Tsung Tsai Electrical Properties and Nonvolatile Memory Applications of Semiconductor Nanocrystals and Metal Nanoparticles, Y. Liu and T. P. Chen Material and Geometric Design of Nanocrystal Flash Memory, Shantanu R. Rajwade and Edwin C. Kan Self-Consistent Quantum-Mechanical Analysis of Nanocrystal Flash-Memory Operation, Jeanlex Soares de Sousa and Jean-Pierre Leburton Si Nanocrystal Memories: From Materials to Device Characteristics, Salvatore Lombardo and Cosimo Gerardi Nonvolatile Memories Using Si Quantum Dot Double-Junction Tunnel Layers, Ryuji Ohba Application of a High-Dielectric for a Flash-Memory Device, Jong Kyung Park and Byung Jin Cho Development of Non-Volatile Flash Memory Using a High-k Charge-Trapping Layer, Gang Zhang and Won Jong Yoo Ultra-High-Density Non-Volatile Flash Memory Devices Realized on CMOS Si Nanowires, Dim-Lee Kwong, Yuan Sun, Yu Hongyu, Navab Singh, and Guo-Qiang Lo Emerging Constraints on NAND Flash Memory Reliability, Christian Monzio Compagnoni, Alessandro S. Spinelli, Andrea L. Lacaita, Andrea Ghetti, and Angelo Visconti Ferroelectric Memory: Materials and Devices, Tian-Ling Ren The Material Fabrication, Device Structure, and Working Mechanism of Ferroelectric Memory, A. Q. Jiang and T. A. Tang Overview, Future Prospects, and Applications of FeRAMs, Daisaburo Takashima Magnetoresistance Behavior of Ferromagnetic Nanorings, A. O. Adeyeye and S. Jain Volume 2 Phase Change Materials: Research Developments and Device Applications, Kuan-Neng Chen, Hsiang-Lan Lung, Yu Zhu, Huai-Yu Cheng, and Frederick T. Chen Phase Change Memory, Dae-Hwan Kang, Ki-Bum Kim, Byung-Ki Cheong, and Hong-Sik Jeong Phase Change Random Access Memory, L. P. Shi and R. Zhao Phase Change Memory Physics-Based Modeling: Electrical Characteristics, Scaling, and Reliability, Daniele Ielmini Metal-Oxide-Based Resistive-Switching Memory: Materials, Device Scaling, and Technology Design, Jinfeng Kang, Bin Gao, and Bin Yu Resistance Switching Effects in Transition Metal Oxide Thin Films for Nonvolatile Memory Applications, Dinghua Bao Resistive-Random Access Memory Based on Amorphous Films, Yuchao Yang and Wei Lu Overview of Metal-Oxide Resistive Memory, Chia Hua Ho and Fu-Liang Yang Resistive-Switching Memory Devises Based on Metal Oxides: Modeling of Unipolar Switching, Reliability, and Scaling, Carlo Cagli and Daniele Ielmini Organic and Polymer Nonvolatile Memories: Materials, Devices, and Working Mechanisms, Wei Lek Kwan and Yang Yang Material, Device, and Circuit of Organic Nonvolatile Memory, Zingway Pei and Heng-Tien Lin Organic/Polymeric Films with Resistive-Switching Behavior and Their Application as Nonvolatile Memory Devices, Jianyong Ouyang Organic Resistive Switching for Nonvolatile Memory Application, Byungjin Cho, Tae-Wook Kim, Yongsung Ji, Sunghoon Song, and Takhee Lee Nonvolatile Memories for Radiation-Hardened Applications, Xiaoli He and Wei Wang Nonvolatile Quantum Memory, Oleksandr Voskoboynikov Search for Frontrunners Among Emerging Non-Volatile Memory Technologies: Sttram or Resistive Switching Random Access Memories or Others, Alois Gutmann and Jin-Ping Han READERSHIP The 2-volume book is intended as a reference book for engineers and scientists actively involved in semiconductor device research and development. It also serves as a textbook for senior undergraduate and graduate students in applied physics, semiconductor physics, materials science and engineering, electrical and electronics engineering, device engineering who have already acquired a basic understanding of semiconductor device physics. Terms and Conditions  Privacy Policy  Copyright © 2000- American Scientific Publishers. All Rights Reserved.